IRLR7843TRPBF 30V 161A N-Channel Power Mosfet TO-252

IRLR7843TRPBF 30V 161A N-Channel Power Mosfet TO-252 is a high-performance HEXFET® power MOSFET specifically engineered for high-density DC-DC switching applications. This component offers extremely low on-resistance and a logic-level gate drive, which allows users to interface it directly with 3.3V or 5V microcontrollers. Consequently, it significantly reduces conduction and switching losses in power-sensitive designs. Furthermore, the advanced packaging technology ensures excellent thermal performance within a compact surface-mount footprint. Therefore, the IRLR7843TRPBF remains a top-tier choice for modern power management systems requiring high efficiency and rapid response times.

Key Features:

• Ultra-Low On-Resistance: Features a remarkably low R_DS(on) to minimize power dissipation and maximize system efficiency.
• Logic Level Gate Drive: Simplifies circuit design by enabling the MOSFET to switch fully using standard logic-level voltages.
• High Pulse Current: Supports a massive pulse current rating, making it robust against high-load transients and startup surges.
• Optimized for Switching: Designed with very low gate charge (Q_g) to reduce switching losses in high-frequency converters.
• Lead-Free Packaging: Comes in a RoHS-compliant TO-252 (D-Pak) package suitable for automated high-volume assembly.

Technical Specifications:

• Drain-to-Source Voltage (V_DSS): 30 V
• Continuous Drain Current (I_D): 161 A (at 25°C, Silicon Limited)
• Static Drain-to-Source On-Resistance (R_DS(on)): ≈ 3.3 mΩ (at V_GS = 10V)
• Gate-to-Source Voltage (V_GS): ± 20 V
• Total Gate Charge (Q_g): ≈ 34 nC
• Power Dissipation (P_D): 140 W (at 25°C)
• Operating Junction Temperature Range: −55°C to +175°C

Mechanical Specifications:

• Package Type: TO-252AA (D-Pak)
• Mounting Style: Surface Mount Device (SMD)
• Encapsulation: Molded Plastic Case (UL 94 V-0 Rated)
• Moisture Sensitivity Level: MSL 1

Dimensions:

• Length (Body): ≈ 6.10 mm
• Width (Body): ≈ 6.50 mm
• Height (Thickness): ≈ 2.30 mm
• Lead Pitch: ≈ 2.29 mm

Pinout and Wiring:

• Pin 1 (Gate): Connect this pin to the control signal or PWM output from your driver circuit.
• Pin 2 / Tab (Drain): Connect the drain (usually the large back tab) to the positive side of the load.
• Pin 3 (Source): Connect this pin to the system ground or the negative rail in an N-channel configuration.
• Wiring Note: However, always use sufficient copper trace area on the PCB to manage the high current and heat generated at peak loads.

Datasheet Reference:

• Download IRLR7843TRPBF Datasheet

Commonly Used in:

• Synchronous Buck Converters: High-efficiency power conversion for computer motherboards and server systems.
• Motor Controllers: Compact ESCs (Electronic Speed Controllers) for drones and RC vehicles.
• Battery Management Systems: High-current protection and switching in lithium-ion battery packs.

Applications:

• DC-DC Conversion: Stepping down voltages in telecommunication and industrial equipment.
• Load Switching: Providing low-loss power switching for heavy DC loads.
• OR-ing Circuits: Managing redundant power supplies in mission-critical hardware.

Equivalent Models:

• FDD8880: A similar N-channel MOSFET in a D-Pak package with logic-level compatibility.
• AOD4184A: Offers comparable voltage and current ratings for switching applications.
• IPD031N03L G: An Infineon OptiMOS™ alternative with similar on-resistance profiles.

Package Includes:

• 1 x IRLR7843TRPBF 30V 161A N-Channel Power Mosfet TO-252