IRF840 500V 8A N-Channel Power MOSFET TO-220

IRF840 500V 8A N-Channel Power MOSFET TO-220 is a high-voltage, fast-switching power MOSFET engineered to handle demanding power conversion and management tasks in industrial and consumer electronics. This N-channel device supports a robust drain-to-source voltage of up to 500V, which makes it particularly effective for off-line power supplies and motor controllers. Consequently, it provides engineers with a reliable solution for high-speed switching applications that require minimal gate drive power. Furthermore, its low on-resistance (R_DS(on)) helps minimize power dissipation, thereby enhancing the overall energy efficiency of the system. Therefore, you can confidently integrate the IRF840 into high-efficiency converters and switching regulators to achieve superior thermal performance and high-speed operation.

Key Features:

• High Voltage Rating: The device supports a maximum V_DSS of 500V, allowing it to safely operate in high-voltage switching environments.
• Low On-Resistance: Features a typical R_DS(on) of 0.85 Ω, which reduces heat generation during heavy conduction cycles.
• Fast Switching Speed: Designed for high-frequency operation, this MOSFET reaches stable switching states rapidly to minimize switching losses.
• High Input Impedance: Requires very low gate drive current, enabling direct control from most specialized driver ICs and microcontrollers with appropriate level shifting.
• TO-220 Package: The standard power package provides excellent heat sink compatibility for efficient thermal management.

Technical Specifications:

• Drain-to-Source Voltage (V_DSS): 500 V
• Continuous Drain Current (I_D): 8.0 A (at T_C = 25°C)
• Pulsed Drain Current (I_DM): 32 A
• Static Drain-to-Source On-Resistance (R_DS(on)): 0.85 Ω maximum
• Gate Threshold Voltage (V_GS(th)): 2.0 V to 4.0 V
• Total Gate Charge (Q_g): ≈ 63 nC
• Power Dissipation (P_D): 125 W (at T_C = 25°C)
• Operating Junction Temperature: −55°C to +150°C

Mechanical Specifications:

• Package Style: TO-220AB
• Encapsulation: Molded Plastic
• Lead Frame: Oxygen-free Copper, Tinned for high conductivity
• Thermal Tab: Connected to Pin 2 (Drain)

Dimensions:

• Body Length: ≈ 15.75 mm
• Body Width: ≈ 10.4 mm
• Lead Length: ≈ 13.0 mm
• Mounting Hole Diameter: ≈ 3.6 mm
• Lead Pitch: 2.54 mm

Pinout and Wiring:

• Pin 1 (Gate): Connect this pin to your gate driver signal to control the switching state of the MOSFET.
• Pin 2 (Drain): Connect this pin to the positive side of your load. Note: The metal tab is also internally connected to the Drain.
• Pin 3 (Source): Connect this pin to the circuit ground or the negative rail of the power source.
• Wiring Tip: Always utilize a gate resistor to dampen oscillations and ensure smooth transitions during high-frequency switching.

Datasheet Reference:

• Download Vishay IRF840 Power MOSFET Datasheet

Commonly Used in:

• Switching Mode Power Supplies (SMPS): Providing high-efficiency primary-side switching for AC-DC converters.
• DC-DC Converters: Stepping down high-voltage DC rails in industrial power management systems.
• UPS Systems: Serving as the main switching element in inverter stages for uninterruptible power supplies.

Applications:

• Motor Controllers: Driving high-voltage DC motors and stepping motors in automation equipment.
• Induction Heating: Managing power levels in high-frequency induction heating circuits.
• Lamp Ballasts: Operating as a switch in electronic ballasts for high-intensity discharge (HID) lamps.
• High-Speed Power Switching: Executing rapid pulse modulation for varied power electronic applications.

Equivalent Models:

• STP8NK50Z: A functionally similar 500V N-channel MOSFET from STMicroelectronics with integrated Zener protection.
• 2SK2645: A Toshiba equivalent featuring comparable voltage and current handling capabilities.
• IRF840LC: A low-charge version of the same series, however, it offers faster switching speeds for specialized high-frequency designs.

Package Includes:

• 1 x IRF840 500V 8A N-Channel Power MOSFET TO-220