IRFR320 N-Channel 400V 3.1A Power Mosfet TO-252

IRFR320 N-Channel 400V 3.1A Power Mosfet TO-252 provides a robust and efficient solution for high-voltage switching applications where PCB space is at a premium. This advanced N-Channel MOSFET utilizes a refined planar stripe technology to achieve a high blocking voltage of 400V while maintaining a relatively low on-resistance. Consequently, the device minimizes power dissipation during operation, making it ideal for high-speed switching power supplies and motor controllers. Furthermore, the surface-mount TO-252 (D-PAK) package facilitates automated assembly and offers excellent thermal performance in a compact footprint. Therefore, you can rely on the IRFR320 to deliver stable performance in demanding environments that require high-voltage handling and reliable switching characteristics.

Key Features:

• High Voltage Capability: Supports a drain-to-source breakdown voltage of up to 400V, providing a significant safety margin for AC/DC conversion and industrial tasks.
• Low On-Resistance: Features a maximum R_DS(on) of ≈ 1.8 Ω, which reduces conduction losses and improves overall system efficiency.
• Fast Switching Speed: The low gate charge (Q_g) allows for rapid transitions between states, enabling higher frequency operation in SMPS designs.
• High Avalanche Energy: Designed to withstand significant energy pulses, ensuring the device remains durable during inductive load switching or voltage transients.
• Compact D-PAK Housing: The TO-252 package offers a surface-mount profile that effectively dissipates heat while saving critical board space.

Technical Specifications:

• Drain-to-Source Voltage (V_DSS): 400 V
• Continuous Drain Current (I_D): 3.1 A (at T_C = 25°C)
• Pulsed Drain Current (I_DM): 12 A
• Static Drain-to-Source On-Resistance (R_DS(on)): ≤ 1.8 Ω
• Gate-to-Source Voltage (V_GS): ±20 V
• Total Gate Charge (Q_g): ≈ 17 nC
• Power Dissipation (P_D): 42 W (at T_C = 25°C)
• Operating Junction Temperature: −55°C to +150°C

Mechanical Specifications:

• Package Type: TO-252 (also known as D-PAK)
• Mounting Type: Surface Mount Device (SMD)
• Lead Finish: Matte Tin / Lead-Free compliant
• Thermal Resistance (Junction-to-Case): 3.0 °C/W

Dimensions:

• Body Width: ≈ 6.5 mm
• Body Length: ≈ 6.1 mm (excluding leads)
• Total Height: ≈ 2.3 mm
• Lead Pitch: 2.29 mm

Pinout and Wiring:

• Pin 1 (Gate): Use this pin to apply the control voltage (V_GS) to trigger the MOSFET.
• Pin 2 (Drain): Connect this terminal (and the metal tab) to the load. However, ensure the tab is adequately soldered to a heat sink or copper pour for thermal management.
• Pin 3 (Source): Connect this terminal to the common ground or the negative side of the circuit.
• Wiring Note: Therefore, always use a gate resistor to dampen oscillations and ensure the gate voltage never exceeds the ±20V limit.

Datasheet Reference:

• Download IRFR320 Power MOSFET Datasheet

Commonly Used in:

• Power Inverters: Converting DC battery power into stable AC output for portable equipment.
• LED Lighting Drivers: Managing the high-voltage switching required for series-connected LED strings.
• DC-DC Converters: Providing efficient voltage regulation in industrial and telecommunications hardware.

Applications:

• Switch Mode Power Supplies (SMPS): Functions as the primary switching element in high-efficiency AC/DC adapters.
• Motor Control: Drives small DC motors or actuators in automation systems requiring high-voltage isolation.
• Electronic Ballasts: Controlling the high-frequency current in fluorescent or HID lighting systems.

Equivalent Models:

• IRU320: A similar variant often used in specific manufacturer lineages with matching electrical profiles.
• STD3NK50ZT4: A functional equivalent from STMicroelectronics offering similar voltage and current ratings in a D-PAK package.
• FQD5N40: A Fairchild/onsemi equivalent that provides 400V N-channel switching with comparable thermal characteristics.

Package Includes:

• 1 x IRFR320 N-Channel 400V 3.1A Power Mosfet (TO-252 Package)