UMH3N-HXY Dual NPN 50V 100mA 150mW General Purpose Transistor SOT-363

UMH3N-HXY Dual NPN 50V 100mA 150mW General Purpose Transistor SOT-363 is a high-efficiency surface-mount component that integrates two independent NPN silicon epitaxial planar transistors into a single, ultra-compact package. This configuration significantly reduces the required PCB footprint while maintaining the versatile switching and amplification characteristics of standard general-purpose transistors. Consequently, engineers often select this device to streamline high-density circuit layouts and minimize assembly costs in modern portable electronics. The UMH3N-HXY handles a collector-emitter voltage of up to 50 V and supports a continuous collector current of 100 mA, providing reliable performance for low-power signal processing. Furthermore, its SOT-363 package offers excellent thermal dissipation for its size, ensuring stable operation even in space-constrained environments. Therefore, you should utilize this dual transistor module to optimize space without sacrificing electrical performance in your next project.

Key Features:

• Dual Transistor Integration: The package contains two electrically isolated NPN transistors, allowing for independent circuit operation or balanced pair configurations.
• Ultra-Small Footprint: Housed in a SOT-363 (SC-88) package, this component saves approximately 50% more space compared to using two separate SOT-23 devices.
• High Voltage Handling: Supports a maximum collector-emitter voltage (V_CEO) of 50 V, making it compatible with a wide range of logic and power supply levels.
• Enhanced Reliability: The silicon epitaxial construction ensures high gain linearity and low saturation voltage across the operating range.
• AEC-Q101 Qualified: Many variants of this series meet automotive reliability standards, ensuring long-term durability in demanding thermal conditions.

Technical Specifications:

• Transistor Polarity: Dual NPN
• Collector-Emitter Voltage (V_CEO): 50 V
• Collector-Base Voltage (V_CBO): 50 V
• Emitter-Base Voltage (V_EBO): 5 V
• Continuous Collector Current (I_C): 100 mA
• Total Power Dissipation (P_D): 150 mW
• DC Current Gain (h_FE): 120 to 560 (at I_C = 1 mA)
• Transition Frequency (f_T): ≈ 250 MHz
• Operating Junction Temperature: −55°C to +150°C

Mechanical Specifications:

• Package Type: SOT-363 (also known as SC-88)
• Case Material: Molded Plastic (Green/Halogen Free)
• Lead Finish: Matte Tin (Sn) or Lead-Free Solder
• Mounting Type: Surface Mount Technology (SMT)
• Moisture Sensitivity Level: MSL 1 (Unlimited Floor Life)

Dimensions:

• Body Length: ≈ 2.0 mm
• Body Width: ≈ 1.25 mm
• Overall Height: ≈ 0.9 mm
• Lead Pitch: 0.65 mm
• Lead Span: ≈ 2.1 mm (End-to-end)

Pinout and Wiring:

• Pin 1 (Emitter 1): Signal exit point for the first NPN transistor.
• Pin 2 (Base 1): Control input for the first NPN transistor.
• Pin 3 (Collector 2): Current input for the second NPN transistor.
• Pin 4 (Emitter 2): Signal exit point for the second NPN transistor.
• Pin 5 (Base 2): Control input for the second NPN transistor.
• Pin 6 (Collector 1): Current input for the first NPN transistor.
• Wiring Note: Ensure proper decoupling near the collectors to prevent high-frequency oscillation during switching.

Datasheet Reference:

• Download ROHM UMH3N Dual Transistor Datasheet

Commonly Used in:

• Consumer Electronics: Power management and signal switching in smartphones and tablets.
• Digital Logic Interfaces: Level shifting and driving small loads like LEDs or buzzers.
• Computing Hardware: Use in motherboard peripheral control and notebook power sequences.

Applications:

• Signal Amplification: Boosting low-current signals in audio and sensor circuits.
• High-Speed Switching: Serving as a digital switch for controlling small DC motors or relays.
• Inverter Circuits: Acting as a basic logic inverter when configured with pull-up resistors.
• Constant Current Sources: Building precise biasing networks in analog instrumentation.

Equivalent Models:

• DTC114E (Rohm): A similar digital transistor series with internal resistors, however, the UMH3N requires external biasing.
• BC847BPN: A common dual NPN/PNP pair; ensure you require Dual NPN before substitution.
• NST3904DXV6: A 6-pin SOT package dual NPN transistor with comparable electrical ratings.

Package Includes:

• 1 x UMH3N-HXY Dual NPN 50V 100mA 150mW General Purpose Transistor SOT-363