SI2302 20V 2.8A 1.25W N-channel Power Mosfet SOT-23

SI2302 20V 2.8A 1.25W N-Channel Power MOSFET SOT-23 represents an efficient semiconductor device designed to optimize low-voltage load switching. Engineers utilize this electronic component to minimize detrimental power loss in modern portable electronics. Consequently, its innovative dense cell design delivers low static on-resistance, ensuring efficiency under demanding electrical conditions. The SI2302 operates flawlessly when integrated into sophisticated DC-DC converters. Furthermore, its miniature SOT-23 packaging intelligently conserves printed circuit board space without sacrificing crucial current handling capabilities. Therefore, you can confidently integrate this robust N-channel power MOSFET into your layout to achieve unparalleled power regulation. This specific functionality prolongs battery life seamlessly.

Key Features:

• Low On-Resistance: Additionally, engineers utilize the dense cell design to provide exceptionally low on-resistance.
• High Current Capability: Indeed, the robust internal silicon architecture safely supports a continuous 2.8 A drain current.
• Fast Switching Speed: Thus, the device transitions instantly between conduction states for high-frequency applications.
• Miniature Footprint: Briefly, the standardized SOT-23 surface-mount package dramatically reduces required circuit board footprint.
• Reliable Operation: Moreover, the manufacturer implements rugged factory methodologies that guarantee long-term operational stability.

Technical Specifications:

• V_DSS (Drain-to-Source Voltage): Specifically, it safely tolerates 20 V during operation.
• I_D (Continuous Drain Current): Additionally, it sustains a continuous drain current measuring 2.8 A at 25°C.
• R_DS(on) (Static Drain-to-Source On-Resistance): Indeed, the device demonstrates a maximum resistance of 85 mΩ.
• V_GS(th) (Gate Threshold Voltage): Furthermore, the gate logically activates between 0.4 V and 1.2 V.
• P_D (Total Power Dissipation): Thus, it safely dissipates 1.25 W of thermal energy.
• Operating Junction Temperature: Consequently, the die functions reliably between −55°C and +150°C.
• Pulsed Drain Current (I_DM): Moreover, the structure briefly handles electrical surges reaching 10 A securely.

Mechanical Specifications:

• Package Type: Specifically, the manufacturer exclusively supplies this inside an SOT-23 miniature plastic package.
• Flammability Rating: Additionally, the external epoxy casing rigorously meets the UL 94 V-0 safety standard.
• RoHS Compliance: Furthermore, the factory eliminates hazardous lead to ensure environmental compliance.
• Moisture Sensitivity Level: Indeed, the factory classifies this as meticulously meeting MSL 1 moisture protocols.

Dimensions:

• Body Length: Specifically, the exact physical casing length meticulously measures approximately 2.9 mm.
• Body Width: Additionally, the strictly horizontal width accurately equals approximately 1.3 mm.
• Body Height: Furthermore, the total vertical body thickness securely measures exactly 1.0 mm.
• Overall Width: Briefly, the maximum transverse width spans roughly 2.4 mm perfectly.

Pinout and Wiring:

• Pin 1 (Gate): Specifically, apply a localized external voltage signal to logically control electrical conductivity.
• Pin 2 (Source): Additionally, connect this grounding pin directly to your internal circuit ground.
• Pin 3 (Drain): Furthermore, securely attach this particular terminal to the localized higher voltage load.
• Wiring Note: However, continuously verify the dedicated gate output absolutely to guarantee complete saturation reliably.

Datasheet Reference:

• Download Vishay SI2302DS Power MOSFET Datasheet

Commonly Used in:

• Load Switches: Indeed, engineers utilize this reliable component to distribute electrical power efficiently.
• DC-DC Converters: Consequently, system designers employ this compact device to predictably regulate fluctuating voltages.
• Motor Control: Thus, electronics hobbyists powerfully drive tiny direct current motors using logic commands.

Applications:

• Portable Electronics: Specifically, you can intelligently protect and power lightweight consumer gadget batteries seamlessly.
• LED Drivers: Additionally, you can purposefully modulate bright light intensity rapidly inside diverse lighting arrays.
• Logic Level Translation: Furthermore, you can decisively establish communication bridges safely between independent voltage systems.

Equivalent Models:

• AO3400: Indeed, alternative commercial manufacturers precisely construct this popular N-channel MOSFET substitute interchangeably.
• BSS138: Briefly, you might successfully utilize this classic logic-level alternative option effectively inside unchallenging environments.
• 2N7002: Consequently, many experienced design engineers regularly deploy this fundamentally equivalent legacy transistor flawlessly.

Package Includes:

• 1 x SI2302 20V 2.8A 1.25W N-Channel Power MOSFET SOT-23