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SI2301 A1SHB P-CHANNEL POWER MOSFET SOT-23
₹2.50
The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching applications.
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- Maximum Power Dissipation (PD): 1.25W
- Maximum Drain-Source Voltage (VDS): 20V
- Maximum Gate-Source Voltage (Vgs): 8V
- Maximum Gate-Threshold Voltage (VGS – TH): 0.45V
- Maximum Drain Current (ID): 2.2A
- Maximum Junction Temperature (Tj): 150°C
- Rise Time (tr): 36 nS
- Drain-Source Capacitance (Cd): 223 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Mechanical Characteristics:
- Package: SOT-23
- Marking – A1SHB
- Mounting Type: Surface Mount
Datasheet:
Datasheet: Download Datasheet
Package includes:
- 1 x SI2301DS SOT-23 P-Channel 20-V (D-S) MOSFET
Additional information
| Weight | .1 g |
|---|---|
| PACKAGE | SOT-23 |
Warranty
- This item is protected with a supplier warranty of 5 days from the time of delivery against manufacturing defects only.
- Reimbursement or Replacement will be done against manufacturing defects only.
- This warranty is void if the device has been damaged by negligence, mishandling, acts of third parties, accident, fire, Flood, lightning, power surges or outages, or other events or circumstances outside the control.
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