SI2300 30V 4.5A 1.25W N-channel Power MOSFET SOT-23

SI2300 30V 4.5A 1.25W N-channel Power MOSFET SOT-23 is an exceptionally versatile, ultra-compact semiconductor component engineered specifically to optimize low-voltage load switching and power management systems. This modern field-effect transistor leverages advanced trench technology to provide an incredibly low static drain-source on-resistance. Consequently, it slashes thermal dissipation losses significantly while sustaining a high continuous drain current of up to 4.5A. The surface-mount SOT-23 miniature layout allows for highly dense circuit designs. Furthermore, this efficient footprint makes the component ideal for space-constrained portable electronics, battery protection circuits, and small DC motor drives. Therefore, you can seamlessly integrate the SI2300 MOSFET into your next project to accomplish smooth, low-loss, and reliable high-speed power distribution.

Key Features:

• Ultra-Low On-Resistance: Features an advanced cell structure that keeps internal conduction resistance minimal, restricting power waste in active switching conditions.
• High Current Density: Delivers a robust 4.5A continuous current handling limit despite operating inside an incredibly small surface-mount package.
• Logic-Level Gate Triggering: Fully activates with exceptionally low gate-to-source voltages, allowing low-power microcontrollers to toggle heavy power loads directly.
• Fast Switching Speed: Exhibits minimal internal gate capacitance, transitioning between operational states rapidly to support high-frequency pulse-width modulation (PWM).
• Space-Saving Footprint: Utilizes the industry-standard SOT-23 casing, saving premium real estate on multi-layered printed circuit boards.

Technical Specifications:

• Channel Polarity: N-Channel
• Drain-Source Voltage (V_DSS): 30 V
• Gate-Source Voltage (V_GSS): ±12 V
• Continuous Drain Current (I_D): 4.5 A (at 25°C Room Temperature)
• Pulsed Drain Current (I_DM): 15 A
• Static Drain-Source On-Resistance (R_DS(on)): ≈ 40 mΩ to 55 mΩ (at V_GS = 4.5V)
• Gate Threshold Voltage (V_GS(th)): 0.5 V minimum to 1.5 V maximum
• Total Power Dissipation (P_D): 1.25 W
• Operating Junction Temperature Range: −55°C to +150°C

Mechanical Specifications:

• Package Type: SOT-23-3 (Surface Mount Device)
• Encapsulation Material: Molded Plastic Compound (UL 94 V-0 Flammability Standard Certified)
• Terminal Connections: Matte Tin-Plated Leads over Copper Alloy Frame
• Moisture Sensitivity Level: MSL 1 (Unlimited Floor Life)

Dimensions:

• Body Length: ≈ 2.9 mm
• Body Width: ≈ 1.3 mm
• Total Width (Including Leads): ≈ 2.4 mm
• Seated Height: ≈ 1.0 mm
• Lead Pitch: ≈ 0.95 mm

Pinout and Wiring:

• Pin 1 (Gate): Connect this terminal to the digital logic controller or PWM driver channel to manage the switching behavior.
• Pin 2 (Source): Attach this contact directly to the system ground or negative supply rail for low-side switching circuits.
• Pin 3 (Drain): Pair this terminal with the negative side of the target load component.
• Wiring Note: However, you must include a small gate resistor to dampen high-frequency ringing oscillations caused by parasitic copper trace inductances.

Datasheet Reference:

• Download Vishay SI2300 N-Channel Power MOSFET Datasheet

Commonly Used in:

• Battery Protection Modules: Regulating charge and discharge trajectories inside Lithium-ion polymer cell arrays.
• Compact DC-DC Converters: Forming the primary power stage for miniature buck and boost power regulation boards.
• Smart Device Switch Matrixes: Isolating delicate sub-circuit blocks dynamically inside tablets, smartwatches, and phones.

Applications:

• Small DC Motor Control: Regulating brush-motor parameters efficiently via microcontroller-generated high-speed PWM waves.
• LED Strip Driving: Modulating power delivery to high-density lighting elements smoothly across smart automation environments.
• Load Switching: Shunting system rails on demand to enter extreme power-saving sleep configurations effortlessly.

Equivalent Models:

• SI2302DS: A closely related N-channel companion element, though it handles slightly different continuous current margins.
• AO3400A: A popular alternative N-channel choice matching the SOT-23 pinout footprint and basic operational specifications.
• BSS138: A generic N-channel switching transistor alternative, however, it provides far lower continuous current allowances.

Package Includes:

• 1 x SI2300 30V 4.5A 1.25W N-channel Power MOSFET SOT-23