IRLR7843TRPBF 30V 161A N-Channel Power Mosfet TO-252

The IRLR7843TRPBF N-Channel Power MOSFET, housed in the surface-mount TO-252 (DPAK) package, delivers exceptional performance for demanding power applications such as DC-DC converters and motor control. Engineered using advanced HEXFET® technology, this 30 V, 161 A MOSFET achieves an extremely low on-resistance (R_DS(on)), which drastically minimizes conduction losses and boosts overall system efficiency. Designers favor this device for high-frequency switching tasks where energy efficiency and thermal management are critical considerations. Its logic-level gate drive voltage simplifies interface requirements, allowing microcontrollers and low-voltage gate drivers to directly control the high-current path.

Key Features:

• Ultra-Low R_DS(on): Achieve minimal power loss with a static drain-to-source on-resistance typically around 2.6 mΩ at V_GS = 10 V, which maximizes efficiency in high-current applications.
• High Current Capability: The device handles a continuous drain current (I_D) of up to 161 A at 25°C case temperature (T_C), allowing it to manage heavy loads effectively.
• Logic-Level Gate Drive: It fully enhances with a low gate-to-source voltage (V_GS) of 4.5 V, simplifying the design of the gate drive circuit and enabling direct connection to many logic ICs.
• Fast Switching Speed: Benefit from low gate charge (Q_G), which facilitates rapid switching transitions and reduces dynamic power losses in high-frequency applications.
• Robust Construction: This MOSFET features a fully characterized avalanche voltage and current, enhancing its ruggedness and reliability in harsh electrical environments.

Technical Specifications:

• Transistor Type: N-Channel Power MOSFET (HEXFET® Technology).
• Drain-to-Source Voltage (V_DSS): 30 V Maximum.
• Continuous Drain Current (I_D): 161 A (at T_C = 25°C); 113 A (at T_C = 100°C).
• Static On-Resistance (R_DS(on)): 3.3 mΩ Max at V_GS = 10 V, I_D = 15 A.
• Gate Threshold Voltage (V_GS(th)): 1.4 V (Min) to 2.3 V (Max) at I_D = 250 µA.
• Total Gate Charge (Q_G): 50 nC Max at V_GS = 4.5 V.
• Maximum Power Dissipation (P_D): 140 W (at T_C = 25°C).
• Operating Junction Temperature (T_J): −55°C to +175°C.

Mechanical Specifications:

• Package Style: TO-252AA (DPAK), a surface-mount package.
• Mounting: Surface Mount Technology (SMD/SMT).
• Leads: Three leads (Gate, Source) plus a large conductive tab (Drain).
• Tab Connection: The Drain pin connects electrically and thermally to the large metal tab for effective heat dissipation into the PCB copper.

Dimensions:

• Body Length (L): ≈ 6.5 mm.
• Body Width (W): ≈ 6.1 mm to 6.22 mm.
• Body Height (H): ≈ 2.3 mm.
• Lead Pitch: ≈ 2.28 mm (Standard for TO-252 DPAK).

Pinout and Wiring:

• Pin 1: Gate (G): Input pin. Apply the control signal voltage (typically 4.5 V to 10 V) to turn the MOSFET ON or OFF. Connect through a current-limiting resistor from the gate driver.
• Pin 2: Drain (D) & Tab: Output pin and main current path. Connect this to the high-voltage side of the load or the switching node. The exposed metal tab is internally connected to the Drain.
• Pin 3: Source (S): Reference pin. Connect this to the low-voltage side of the circuit, typically ground (GND) in a low-side switching configuration.
• Wiring Tip: Ensure you use generous copper pours under the DPAK tab to maximize the heat sinking capability and realize the full 140 W power dissipation rating.

Datasheet Reference:

• Download IRLR7843 HEXFET® Power MOSFET Datasheet (Infineon/IRF)

Commonly Used in:

• Point-of-Load (POL) Converters: Essential for high-density, high-efficiency DC-DC buck converters in server and networking equipment.
• Battery Management Systems (BMS): Employed in battery protection, charging, and discharge control circuits for power tools and electric vehicles.
• Automotive Electronics: Utilized in various 12 V and 24 V systems, including solenoid control and reverse battery protection.

Applications:

• Synchronous Rectification: Its ultra-low R_DS(on) makes it perfect for replacing Schottky diodes in secondary-side rectification for improved efficiency.
• Motor Control: Drive brushed and brushless DC motors (BLDC) in half-bridge or H-bridge topologies, controlling speed and direction.
• Load Switching: Functions effectively as a high-side or low-side load switch for distributing power within a system.

Equivalent Models:

• IRLB3036: A similar 30 V, N-channel device, often providing comparable or slightly improved R_DS(on) characteristics in a larger TO-263 package.
• NTMFS4C02N (Onsemi): A viable alternative with a low R_DS(on) and similar voltage rating, often found in high-efficiency switching designs.
• CSD18536KCS (Texas Instruments): A next-generation N-Channel MOSFET offering competitive performance metrics in a small package.

Package Includes:

• 1 x IRLR7843TRPBF 30V 161A N-Channel Power Mosfet (TO-252)