IRFZ44N 55V 49A N-Channel Power MOSFET TO-220

IRFZ44N 55V 49A N-Channel Power MOSFET TO-220 is a high-performance, semiconductor device engineered for efficient power management and switching in various electronic circuits. This N-channel enhancement mode transistor utilizes advanced process technology to achieve an extremely low on-resistance per silicon area. Consequently, it facilitates high-speed switching and reliable operation even under demanding electrical loads. Engineers frequently select the IRFZ44N for projects requiring the control of high-current devices with relatively low-voltage logic. Furthermore, the robust TO-220 package ensures excellent thermal dissipation when paired with an appropriate heatsink. Therefore, you can confidently integrate this MOSFET into your motor drivers, power supplies, and high-frequency inverters to achieve superior system efficiency.

Key Features:

• High Current Capacity: The device supports a continuous drain current of up to 49A, making it ideal for high-power industrial and hobbyist applications.
• Low On-Resistance: Features a typical R_DS(on) of only 17.5 mΩ, which minimizes power loss and heat generation during operation.
• Fast Switching Speed: Designed for rapid state transitions, this MOSFET efficiently handles high-frequency Pulse Width Modulation (PWM) signals.
• Full Voltage Rating: Provides a 55V drain-to-source breakdown voltage, offering a safe operating margin for standard 12V and 24V DC systems.
• Advanced Planar Technology: Utilizes ruggedized design principles to ensure high cell density and improved reliability under stressful conditions.

Technical Specifications:

• Drain-to-Source Voltage (V_DSS): 55 V
• Continuous Drain Current (I_D): 49 A (at T_C = 25°C)
• Pulsed Drain Current (I_DM): 160 A
• Static Drain-to-Source On-Resistance (R_DS(on)): 17.5 mΩ maximum
• Gate Threshold Voltage (V_GS(th)): 2.0 V to 4.0 V
• Total Gate Charge (Q_g): ≈ 63 nC
• Operating Junction Temperature: −55°C to +175°C

Mechanical Specifications:

• Package Type: TO-220AB
• Lead Finish: Matte Tin / Lead-Free
• Mounting Type: Through-Hole
• Case Material: Molded Plastic (UL Flammability Classification 94V-0)

Dimensions:

• Total Height: ≈ 28.96 mm
• Body Width: ≈ 10.66 mm
• Lead Length: ≈ 12.7 mm
• Mounting Hole Diameter: ≈ 3.81 mm

Pinout and Wiring:

• Pin 1 (Gate): Use this pin to control the MOSFET; applying a positive voltage relative to the source turns the device on.
• Pin 2 (Drain): Connect this pin to the negative side of the load you wish to control.
• Pin 3 (Source): Connect this pin to the system ground or the negative terminal of the power supply.
• Wiring Note: However, always ensure the use of a gate resistor (typically 10Ω to 100Ω) to prevent parasitic oscillations and protect the driving microcontroller.

Datasheet Reference:

• Download IRFZ44N N-Channel Power MOSFET Datasheet

Commonly Used in:

• Motor Controllers: Serves as the primary switching element in H-bridge circuits for DC motor speed and direction control.
• Inverters: Converts DC battery power into AC voltage for solar systems and uninterruptible power supplies (UPS).
• DC-DC Converters: Regulates voltage levels in buck and boost converters used in automotive and industrial electronics.

Applications:

• Switching Regulators: Efficiently manages power distribution in high-current power supply modules.
• Battery Management Systems: Controls charging and discharging paths in lithium-ion battery packs.
• Solenoid and Relay Drivers: Provides a robust interface for driving heavy inductive loads from low-power control signals.

Equivalent Models:

• STP55NF06: A widely available N-channel MOSFET with similar voltage and current ratings in a TO-220 package.
• IRFZ46N: A slightly higher current alternative often used as a drop-in replacement where extra headroom is necessary.
• BUZ11: A classic power MOSFET that shares a similar pinout and application range, though it has a higher on-resistance.

Package Includes:

• 1 x IRFZ44N 55V 49A N-Channel Power MOSFET TO-220