BPW34 Silicon Photocell DIP-2 is a high-speed, high-sensitive PIN photodiode designed to detect visible and near-infrared radiation in a variety of electronic sensing applications. This miniature, flat plastic package features a large radiant sensitive area, which allows the device to capture light with exceptional precision and rapid response times. Consequently, the BPW34 excels in high-frequency signal detection and precise light measurement tasks. Utilizing a silicon-based PIN structure, the sensor provides linear output over a wide range of light intensities. Furthermore, its low capacitance makes it ideal for high-speed data communication and remote control links. Therefore, you should choose the BPW34 whenever your design requires a reliable, fast-acting, and cost-effective optical interface.
Key Features:
- High Photosensitivity: The large active area ensures maximum light collection efficiency for both visible and infrared spectrums.
- Fast Response Time: Features a rapid rise and fall time (typically 20 ns), enabling high-speed switching and data reception.
- Wide Spectral Range: Sensitivities span from 400 nm to 1100 nm, however, it reaches peak sensitivity at approximately 900 nm.
- Low Junction Capacitance: Minimal internal capacitance allows the photodiode to operate effectively in high-frequency applications.
- Linearity: Provides a highly linear relationship between incident light intensity and the resulting photocurrent.
Technical Specifications:
- Reverse Voltage (VR): 60 V maximum
- Radiant Sensitive Area: 7.5 mm2
- Peak Sensitivity Wavelength (λp): ≈ 900 nm
- Spectral Bandwidth (λ0.5): 430 nm to 1100 nm
- Photocurrent (Ira): ≈ 50 μA (at Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V)
- Dark Current (Iro): 2 nA typical (≤ 30 nA max)
- Operating Temperature Range: −40°C to +100°C
Mechanical Specifications:
- Package Type: DIP-2 (Dual In-line Package)
- Enclosure Material: Transparent plastic with flat top
- Lead Material: Tinned Copper
- Optical Window: Clear plastic for unfiltered light detection
Dimensions:
- Body Length: ≈ 5.4 mm
- Body Width: ≈ 4.3 mm
- Body Height: ≈ 3.2 mm
- Lead Pitch: 2.54 mm (Standard 0.1 inch)
- Lead Length: ≈ 15.0 mm
Pinout and Wiring:
- Pin 1 (Anode): Identifiable by the shorter lead or specific markings; connect to the positive side of the sensing circuit.
- Pin 2 (Cathode): Identifiable by the longer lead; connect to the negative side or the bias voltage source.
- Wiring Note: To achieve the fastest response, you should operate the BPW34 in reverse-bias mode (photoconductive mode). Conversely, use the photovoltaic mode (zero-bias) for precision measurements with low noise requirements.
Datasheet Reference:
Commonly Used in:
- Infrared Remote Receivers: Capturing data signals from TV, AC, and industrial remote controls.
- Light Barriers: Detecting the presence or absence of an object in automated production lines.
- Optical Power Meters: Measuring intensity in laser systems and environmental light sensors.
Applications:
- Control and Drive Circuits: Acting as a trigger for light-dependent relays and switches.
- Medical Instrumentation: Used in pulse oximeters and other diagnostic tools requiring precise light detection.
- Electronic Shutter Control: Adjusting exposure in cameras and optical sensing equipment.
- Solar Radiometers: Monitoring solar radiation levels for weather stations and energy research.
Equivalent Models:
- BPW34S: The surface-mount (SMD) version of the same high-sensitivity photodiode.
- SFH 203: A functionally similar PIN photodiode from OSRAM that offers comparable spectral sensitivity.
- VBP104S: Another high-speed silicon PIN photodiode that provides a similar active area and response profile.
Package Includes:
- 1 x BPW34 Silicon Photocell DIP-2
Additional information
| Weight | .5 g |
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