NCE4080K 40V 80A N-Channel Power MOSFET TO-252 delivers low on-state resistance and superior switching for high-efficiency power management systems. This advanced NCE4080K Power MOSFET uses high-density trench cell technology to minimize conduction losses across power stages. Consequently, engineers achieve high thermal efficiency and dependable power handling in compact layouts. Furthermore, surface-mount TO-252 packaging facilitates heat dissipation into printed circuit board copper. Therefore, this transistor serves as an optimal switching solution for DC-DC converters, motor drivers, and battery circuits.
Key Features of the NCE4080K Power MOSFET:
- Low On-State Resistance: Delivers static on-resistance of 6.6 mΩ maximum at 10V gate drive, minimizing heat loss.
- High Current Handling: Supports continuous drain currents up to 80A at standard temperatures for heavy-load switching.
- Fast Switching Speed: Features low parasitic capacitances; therefore, it enables high-frequency power conversion with minimal losses.
- Avalanche Ruggedness: Withstands transient inductive energy, ensuring durability against voltage spikes in motor environments.
- Compact Power Packaging: Consequently, the TO-252 outline provides efficient heat transfer to circuit boards.
Technical Specifications:
- Drain-to-Source Voltage (VDSS): 40 V
- Continuous Drain Current (ID): 80 A (at TC = 25°C)
- Pulsed Drain Current (IDM): 320 A
- Static On-Resistance (RDS(on)): ≤ 6.6 mΩ (at VGS = 10 V)
- Gate Threshold Voltage (VGS(th)): 1.2 V to 2.5 V
- Maximum Gate-Source Voltage (VGS): ±20 V
- Total Power Dissipation (PD): 80 W (at TC = 25°C)
- Gate Drive Requirement: Standard 10 V gate drive for saturation
- Operating Junction Temperature: −55°C to +175°C
- Input Capacitance (Ciss): ≈ 2650 pF
Mechanical Specifications:
- Package Type: TO-252-2L (DPAK surface-mount outline)
- Device Marking: NCE4080K printed clearly on the package face
- Terminal Finish: Matte tin-plated leads suitable for reflow soldering
- Flammability Rating: UL 94 V-0 flame-retardant epoxy
- Breadboard Compatibility: Indeed, breadboard prototyping requires a 2.28 mm to 2.54 mm breakout adapter.
- Weight: ≈ 0.35 grams
Dimensions:
- Body Length: ≈ 6.50 mm ± 0.20 mm
- Overall Length: ≈ 9.90 mm ± 0.40 mm
- Body Width: ≈ 6.60 mm ± 0.20 mm
- Body Height: ≈ 2.30 mm ± 0.10 mm
- Lead Pitch: ≈ 2.28 mm standard pitch
Pinout and Wiring:
- Pin 1 (Gate): Controls conduction via gate pulses; requires 10V for saturation.
- Pin 2 and Tab (Drain): Connects internally to heatsink tab and load negative side.
- Pin 3 (Source): Connects to circuit ground in low-side configurations.
- Wiring Note: Keep gate traces short; however, add a 10kΩ pulldown resistor to prevent accidental turn-on.
- Technician Note: Furthermore, direct 3.3V logic cannot fully saturate this transistor, so always use a dedicated gate driver IC such as TC4427.
Datasheet Reference:
Commonly Used in:
- Synchronous Buck Converters: Regulating high-current stages in switch-mode power supplies.
- BLDC Motor ESCs: Driving brushless motors in drones, robotics, and power tools.
- Lithium Battery Protection: Additionally, isolating battery banks during fault conditions.
Applications:
- High-Power DC Load Switching: Controlling solenoid valves, high-current LEDs, and heaters.
- Automotive Electronics: Managing 12V and 24V auxiliary power circuits and fan controls.
- H-Bridge Inverters: Similarly, providing fast switching for actuators and robotic drives.
- Component Sourcing: Overall, you can Browse more power MOSFET components here to complete your project.
Equivalent Models:
- AOD4184A: Offers similar 40V rating and low on-resistance in a standard TO-252 package.
- STD80N4F6: Delivers comparable 40V 80A switching capabilities for industrial power stages.
- IRLR7843: Serves as an alternative for low-voltage synchronous rectification, although users must verify gate drive requirements.
Package Includes:
- 1 x NCE4080K 40V 80A N-Channel Power MOSFET (TO-252 Package)
Additional information
| Weight | 2 g |
|---|
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