IRLML2502TRPBF N-CHANNEL MOSFET 20V 4.2A SOT-23

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

• • Transistor Polarity: N Channel
  • Drain Source Voltage Vds: 20V
  • Continuous Drain Current Id: 4.2A
  • On Resistance Rds(on): ) 0.021ohm
  • Transistor Mounting: Surface Mount
  • Gate Source Threshold Voltage Max: 900mV
  • Rds(on) Test Voltage: 4.5V
  • Power Dissipation Pd: 1.3W
  • Transistor Case Style: SOT-23

DataSheet:

• • Download Datasheet

Package Includes:

• • 1 X IRLML2502TRPBF N-CHANNEL MOSFET 20V 4.2A SOT-23