IRFP260N 200V 50A N-Channel Power MOSFET TO-247

IRFP260N 200V 50A N-Channel Power MOSFET TO-247 is a high-performance power semiconductor designed for applications requiring high speed and massive power handling capabilities. This N-Channel MOSFET utilizes advanced HEXFET power MOSFET technology to achieve an extremely low on-resistance per silicon area. Consequently, it offers superior efficiency and minimizes thermal losses in demanding environments. Furthermore, the TO-247 package ensures reliable operation and easy mounting for high-power industrial designs. Therefore, you can confidently deploy this MOSFET in high-frequency switching power supplies, motor controllers, and DC-to-AC inverters where durability and performance remain critical.

Key Features:

• High Power Capacity: It manages a continuous drain current of up to 50A, enabling the control of heavy industrial loads.
• Low On-Resistance: Features an R_DS(on) of just 0.04 Ω, which significantly reduces energy dissipation during high-current operation.
• Fast Switching: The optimized gate charge characteristics allow for rapid switching speeds, enhancing efficiency in PWM applications.
• Dynamic dv/dt Rating: Provides high ruggedness against voltage spikes, ensuring long-term reliability in electrically noisy environments.
• Fully Avalanche Rated: Withstands energy surges during inductive load switching, offering an extra layer of protection for power electronics.

Technical Specifications:

• Drain-to-Source Voltage (V_DSS): 200 V
• Continuous Drain Current (I_D): 50 A (at 25°C)
• Pulsed Drain Current (I_DM): 200 A
• Maximum Power Dissipation (P_D): 300 W
• Static Drain-to-Source On-Resistance (R_DS(on)): 0.04 Ω maximum
• Gate-to-Source Voltage (V_GS): ±20 V
• Operating Junction Temperature: −55°C to +175°C

Mechanical Specifications:

• Package Type: TO-247AC
• Case Material: Molded Plastic (UL 94 V-0 Rated)
• Mounting: Through-Hole mounting with a dedicated screw hole for heatsink attachment.
• Lead Finish: Pure matte tin-plated leads for excellent solderability.

Dimensions:

• Body Height: ≈ 20.0 mm
• Body Width: ≈ 15.9 mm
• Body Thickness: ≈ 5.0 mm
• Lead Length: ≈ 20.0 mm
• Pin Pitch: ≈ 5.45 mm

Pinout and Wiring:

• Pin 1 (Gate): Use this pin to control the switching state by applying the appropriate gate voltage.
• Pin 2 (Drain): Connect this pin to the negative side of your load in a low-side switching configuration.
• Pin 3 (Source): Connect this pin to the circuit ground or common return path.
• Wiring Note: However, you must use a substantial heatsink and thermal paste when operating at high currents to prevent thermal runaway.

Datasheet Reference:

• Download Infineon IRFP260N MOSFET Datasheet

Commonly Used in:

• Power Inverters: Converting DC battery power into high-voltage AC for solar or backup power systems.
• Motor Drivers: Driving high-current DC motors used in robotics and industrial machinery.
• Audio Amplifiers: Serving as the output stage in high-fidelity, high-power audio equipment.

Applications:

• Switch Mode Power Supplies (SMPS): Providing efficient power conversion in server and telecommunication power bricks.
• Uninterruptible Power Supplies (UPS): Managing critical power switching during utility outages.
• Induction Heating: Driving the high-frequency resonant circuits required for industrial heating processes.
• Battery Management Systems: Additionally, it works effectively in high-current battery protection and isolation circuits.

Equivalent Models:

• STW50NB20: A similar 200V N-channel MOSFET from STMicroelectronics with comparable current ratings.
• IXFH50N20: An alternative high-power MOSFET from IXYS, although you should check the gate charge requirements for compatibility.
• IRFP264: A slightly higher voltage variant often used when additional voltage headroom is necessary.

Package Includes:

• 1 x IRFP260N 200V 50A N-Channel Power MOSFET TO-247