40N60 600V 40A IGBT TO-247 is a high-performance Insulated Gate Bi-polar Transistor designed to handle demanding power switching tasks in industrial and consumer electronics. This robust device combines the high-speed switching characteristics of a MOSFET with the high-voltage, high-current handling capabilities of a bi-polar transistor. Consequently, it offers exceptionally low conduction losses and efficient operation in high-power applications. The 40N60 effectively manages collector-emitter voltages up to 600 V and handles continuous currents of 40 A at standard operating temperatures. Furthermore, the advanced Trench-gate Field-stop technology ensures a very low saturation voltage, which reduces heat dissipation during operation. Therefore, engineers frequently select this component to optimize performance in motor drives, inverters, and power supplies where efficiency and thermal management remain critical priorities.
Key Features:
- High Power Density: The 40N60 manages significant current and voltage levels within a compact TO-247 package, enabling smaller overall system designs.
- Low Saturation Voltage (VCE(sat)): The device features a typical saturation voltage of 1.8 V, which minimizes power loss during the conduction phase.
- Trench Field-Stop Technology: This design provides a tight parameter distribution and high ruggedness against short-circuit conditions.
- Fast Switching Speed: Low gate charge and optimized internal structure allow for high-frequency operation, reducing the size of passive components like inductors.
- High Input Impedance: Users can drive the gate directly with standard driver circuits, simplifying the overall interface design.
Technical Specifications:
- Collector-Emitter Voltage (VCES): 600 V
- Continuous Collector Current (IC): 40 A (at TC = 100°C) / 80 A (at TC = 25°C)
- Pulsed Collector Current (ICM): 120 A
- Collector-Emitter Saturation Voltage (VCE(sat)): ≈ 1.8 V (Typical)
- Gate-Emitter Voltage (VGES): ±20 V
- Total Power Dissipation (PD): ≈ 300 W (at TC = 25°C)
- Operating Junction Temperature: −55°C to +150°C
Mechanical Specifications:
- Package Style: TO-247 (Through-Hole)
- Lead Finish: Pure Matte Tin Plating
- Case Material: Molded Plastic (UL 94 V-0 Flammability Rating)
- Mounting Type: Through-hole with screw-down heat sink capability
Dimensions:
- Body Height: ≈ 20.0 mm
- Body Width: ≈ 15.8 mm
- Body Thickness: ≈ 5.0 mm
- Lead Length: ≈ 20.0 mm
- Lead Pitch: 5.45 mm (Standard TO-247 spacing)
Pinout and Wiring:
- Pin 1 (Gate): Connect this pin to the gate driver signal to control the switching state of the IGBT.
- Pin 2 (Collector): Connect this terminal to the high-voltage load or positive supply rail.
- Pin 3 (Emitter): Connect this terminal to the circuit ground or the negative side of the load.
- Wiring Tip: Always utilize a dedicated gate resistor to prevent oscillations and manage switching speeds effectively.
Datasheet Reference:
- Download 40N60 (IKW40N60) IGBT Datasheet
Commonly Used in:
- Variable Frequency Drives (VFD): Controlling the speed of AC motors in industrial machinery.
- Uninterruptible Power Supplies (UPS): Converting battery power to AC during main power failures.
- Solar Inverters: Converting DC voltage from solar panels into usable AC power for the grid.
Applications:
- Induction Heating: Providing high-frequency switching for domestic and industrial induction cooktops.
- Welding Machines: Managing the high-current output required for stable arc welding.
- Switch Mode Power Supplies (SMPS): Serving as the main switching element in high-wattage power converters.
- PFC Circuits: Enhancing power factor correction in large-scale electrical equipment.
Equivalent Models:
- FGA40N60UFD: A popular alternative from ON Semiconductor with an integrated fast recovery diode.
- HGTG40N60B3: A Fairchild/ON Semi equivalent that offers similar voltage and current ratings.
- STGW40H60DF: However, this STMicroelectronics model provides improved thermal performance for high-frequency switching.
Package Includes:
- 1 x 40N60 600V 40A IGBT (TO-247 Package)
Additional information
| Weight | 5 g |
|---|---|
| Country of Origin | China |







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