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2N7002 FIELD-EFFECT TRANSISTOR
₹2.50
2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Additional information
| Weight | .1 g |
|---|
Warranty
- This item is protected with a supplier warranty of 5 days from the time of delivery against manufacturing defects only.
- Reimbursement or Replacement will be done against manufacturing defects only.
- This warranty is void if the device has been damaged by negligence, mishandling, acts of third parties, accident, fire, Flood, lightning, power surges or outages, or other events or circumstances outside the control.
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