IRFP064NPBF 98A 55V N-Channel MOSFET TO-3P

IRFP064NPBF 98A 55V N-Channel MOSFET TO-3P is a high-power HEXFET® Power MOSFET designed to provide exceptionally low on-resistance per silicon area, making it an ideal choice for high-efficiency power switching applications. This robust N-channel device handles continuous drain currents up to 110A (package limited to 98A) while maintaining a low drain-to-source voltage of 55V. Consequently, it excels in demanding environments where thermal management and power density are critical factors. Advanced processing technology ensures that the IRFP064NPBF delivers fast switching speeds and ruggedized device designs. Therefore, you can confidently utilize this MOSFET in high-current industrial applications, automotive power systems, and high-frequency DC-DC converters to achieve superior performance and reliability.

Key Features:

• Ultra-Low On-Resistance: Features an extremely low R_DS(on) to minimize conduction losses and maximize overall system efficiency.
• High Current Capability: Supports a continuous drain current of 98A, allowing the device to drive heavy industrial and automotive loads with ease.
• Fast Switching Speed: Optimized gate charge characteristics enable high-frequency operation, reducing switching losses in power supply designs.
• Advanced HEXFET® Technology: Utilizes proprietary planar technology to achieve a high cell density, ensuring a rugged and reliable performance under high-stress conditions.
• TO-247/TO-3P Package: The large through-hole package offers superior thermal dissipation capabilities compared to smaller surface-mount alternatives.

Technical Specifications:

• Drain-to-Source Voltage (V_DSS): 55 V
• Continuous Drain Current (I_D): 98 A (at T_C = 25°C)
• Pulsed Drain Current (I_DM): 390 A
• Static Drain-to-Source On-Resistance (R_DS(on)): 0.008 Ω (Maximum)
• Gate-to-Source Voltage (V_GS): ±20 V
• Total Gate Charge (Q_g): ≈ 170 nC
• Operating Junction Temperature: −55°C to +175°C

Mechanical Specifications:

• Package Type: TO-247AC (often referred to as TO-3P compatible)
• Mounting Type: Through-Hole
• Case Material: Molded Plastic (UL Flammability Classification 94V-0)
• Lead Finish: Matte Tin / Lead-Free

Dimensions:

• Overall Height: ≈ 20.0 mm
• Body Width: ≈ 15.5 mm
• Body Thickness: ≈ 5.0 mm
• Lead Length: ≈ 14.0 mm
• Lead Pitch: 5.45 mm (Standard for TO-247)

Pinout and Wiring:

• Pin 1 (Gate): Connect this pin to your PWM controller or gate driver circuit to control the switching state.
• Pin 2 (Drain): Connect this terminal to the negative side of your load in a low-side switching configuration.
• Pin 3 (Source): Connect this pin to the circuit ground (0V reference).
• Wiring Note: Furthermore, ensure you use thick traces or heavy-gauge wire for the Drain and Source connections to prevent excessive heating during high-current operation.

Datasheet Reference:

• Download Infineon IRFP064NPBF MOSFET Datasheet

Commonly Used in:

• Power Inverters: Converting DC power from batteries into AC power for various consumer and industrial electronics.
• Motor Controllers: Serving as the main switching element in high-current DC motor speed controllers and H-bridge circuits.
• Battery Management Systems: Managing high-current discharge paths and protection circuits in large lithium-ion packs.

Applications:

• Uninterruptible Power Supplies (UPS): Providing high-speed switching for power backup and regulation.
• Solar Charge Controllers: Managing energy flow from solar panels to battery storage systems.
• DC-DC Converters: However, these must be high-power variants to utilize the full capacity of the 98A rating.
• Electric Vehicle (EV) Systems: Controlling auxiliary high-power loads within the vehicle’s electrical architecture.

Equivalent Models:

• IRFP064PBF: The standard version of the same N-channel MOSFET, often featuring slightly different thermal specifications.
• STW110N55F6 (STMicroelectronics): A high-current N-channel MOSFET with similar voltage and current handling ratings.
• IXFH120N15 (IXYS): Another industrial-grade alternative, consequently requiring a review of specific gate charge timings before replacement.

Package Includes:

• 1 x IRFP064NPBF 98A 55V N-Channel MOSFET TO-3P / TO-247