2N7002 MN1 60V 300mA N-Channel Mosfet SOT-23

2N7002 MN1 60V 300mA N-Channel Mosfet SOT-23 is a high-density, logic-level enhancement mode field-effect transistor designed for efficient switching and low-power signal management. This miniature component utilizes advanced trench technology to provide excellent on-state resistance while maintaining a very low gate threshold voltage. Consequently, it interfaces perfectly with 3.3V and 5V microcontrollers, allowing direct logic-level control without the need for additional driver stages. Furthermore, the SOT-23 surface-mount package offers significant space savings for modern, high-density printed circuit board designs. Therefore, engineers frequently select the 2N7002 for high-speed line driving, level shifting, and small load switching where reliability and speed are paramount.

Key Features:

• Logic-Level Gate Drive: The device switches fully with a low gate-to-source voltage, making it compatible with TTL and CMOS logic families.
• High-Speed Switching: It features low input capacitance and fast turn-off times, which support high-frequency pulse-width modulation (PWM) applications.
• Rugged Design: The MOSFET incorporates built-in ESD protection in many variants, ensuring durability during handling and operation in sensitive environments.
• Low On-Resistance: Features a minimized R_DS(on) to reduce power dissipation and heat generation during continuous conduction.
• Compact SOT-23 Form Factor: The ultra-small footprint facilitates the development of miniaturized consumer and industrial electronics.

Technical Specifications:

• Drain-Source Voltage (V_DSS): 60 V
• Continuous Drain Current (I_D): 300 mA (Up to 500 mA pulsed)
• Gate-Source Threshold Voltage (V_GS(th)): 1.0 V to 2.5 V
• Static Drain-Source On-Resistance (R_DS(on)): ≈ 2.0 Ω to 5.0 Ω (at V_GS = 10 V)
• Total Gate Charge (Q_g): ≈ 0.3 nC
• Power Dissipation (P_D): 350 mW
• Operating Junction Temperature: −55°C to +150°C

Mechanical Specifications:

• Package Type: SOT-23-3 (Small Outline Transistor)
• Lead Finish: Lead-free (Matte Tin)
• Flammability Rating: UL 94 V-0
• Moisture Sensitivity Level: MSL 1 (Unlimited floor life)

Dimensions:

• Body Length: ≈ 2.92 mm
• Body Width: ≈ 1.30 mm
• Body Height: ≈ 1.12 mm
• Total Width (including pins): ≈ 2.40 mm
• Pin Pitch: 1.9 mm

Pinout and Wiring:

• Pin 1 (Gate): Connect this terminal to your logic control signal (e.g., MCU GPIO pin).
• Pin 2 (Source): Connect this pin to the circuit ground (0V) for low-side switching.
• Pin 3 (Drain): Connect this terminal to the negative side of the load you wish to switch.
• Wiring Note: However, you must always ensure a common ground between the control source and the MOSFET source for proper triggering.

Datasheet Reference:

• Download ON Semiconductor 2N7002 Datasheet

Commonly Used in:

• Logic Level Shifters: Converting signals between different voltage domains, such as 3.3V and 5V systems.
• Load Switches: Managing power to small DC motors, solenoids, or high-power LED strings.
• Signal Inverters: Creating simple NOT logic gates or inverting PWM signals for motor drivers.

Applications:

• Battery Management: Used in cell protection circuits and battery-saving disconnect switches.
• Power Supply Control: Acting as a pilot switch for larger power MOSFETs or as a reset controller in SMPS.
• Communication Interfaces: Driving lines in RS-232 or I2C bus extenders where high input impedance is required.

Equivalent Models:

• BSS138: A popular alternative with lower gate threshold, ideal for ultra-low voltage level shifting.
• BSH103: A similar N-channel MOSFET in SOT-23 package offering comparable voltage ratings.
• 2N7000: The through-hole (TO-92) version of this MOSFET, nevertheless, it shares nearly identical electrical characteristics.

Package Includes:

• 1 x 2N7002 MN1 60V 300mA N-Channel Mosfet SOT-23