NCE4688 60V 6.3A Dual Channel Power MOSFET SOP-8 delivers high-efficiency switching and power management in a compact surface-mount package, integrating two N-Channel enhancement mode MOSFETs into a single SOP-8 footprint. This dual-channel design allows engineers to implement H-bridge motor drivers, synchronous buck converters, or advanced battery protection circuits with maximum component density. Consequently, the NCE4688 significantly reduces PCB area and assembly complexity in space-constrained applications. We manufacture this Power MOSFET with advanced trench technology, achieving an extremely low on-state resistance (RDS(ON)), which minimizes power loss and improves overall thermal performance. Therefore, you should select the NCE4688 when your design demands a reliable, high-current, and thermally efficient solution for low-voltage switching tasks.
Key Features:
- Dual N-Channel Design: Integrates two independent N-Channel MOSFETs in one package, ideal for half-bridge and full-bridge configurations.
- Low On-Resistance (RDS(ON)): Achieves very low drain-source on-resistance, reducing conduction losses and enhancing system efficiency.
- High Current Capability: Each channel handles a continuous drain current (ID) of 6.3 A, supporting moderate to high-power density applications.
- Trench Technology: Utilizes advanced trench MOSFET technology to ensure high-speed switching performance and robust operation.
- Gate-Source Voltage (VGS) Range: Supports a wide VGS range (±20 V), offering compatibility with various gate driving circuits.
Technical Specifications:
- Drain-Source Voltage (VDSS): 60 V
- Continuous Drain Current (ID): 6.3 A (at TA=25°C)
- Pulsed Drain Current (IDM): 20 A
- Maximum RDS(ON): 25 mΩ (VGS=10V) / 38 mΩ (VGS=4.5V)
- Gate-Source Voltage (VGS): ±20 V
- Power Dissipation (PD): 2.0 W (at TA=25°C)
- Threshold Voltage (VGS(th)): 1.0 V to 3.0 V
- Operating Junction Temperature (TJ): −55°C to +150°C
Mechanical Specifications:
- Package Type: SOP-8 (Small Outline Package, 8-Pin)
- Mounting: Surface Mount Technology (SMT)
- Material: Halogen-free and RoHS Compliant
- Moisture Sensitivity Level (MSL): MSL 1 (Unlimited floor life at ≤30°C / 85% RH)
Dimensions:
- Body Length: ≈ 4.9 mm
- Body Width: ≈ 3.9 mm
- Pitch (Lead Spacing): 1.27 mm
- Total Height: ≈ 1.5 mm (Maximum)
- Weight: ≈ 0.05 g (Ultra-lightweight for portable devices)
Pinout and Wiring:
- Pins 1, 2, 3 (Source 1): Connect to the Source terminal of MOSFET 1.
- Pin 4 (Gate 1): Connect to the Gate drive signal for MOSFET 1.
- Pin 5 (Gate 2): Connect to the Gate drive signal for MOSFET 2.
- Pins 6, 7, 8 (Drain 2 / Drain 1): Connect to the Drain terminals of MOSFET 2 and MOSFET 1, respectively. Note: Pins 6, 7, and 8 often connect internally or are used for maximum heat sinking and current capacity.
- Design Tip: Always incorporate a gate resistor to dampen oscillations and ensure stable, fast switching.
Datasheet Reference:
- Download NCE4688 Dual Channel MOSFET Datasheet
Commonly Used in:
- Battery Protection Circuits: Essential for implementing dual FET protection, managing charge and discharge paths in lithium-ion packs.
- DC-DC Converters: Commonly used in synchronous buck and boost converter topologies.
- Motor Control: Perfect for driving brushed DC motors in full H-bridge configurations for motion control applications.
Applications:
- Portable Devices: Manages power switching in laptops, power banks, and portable media players where space is highly constrained.
- Load Switches: Enables efficient and fast switching of power rails in various electronic systems.
- LED Lighting Drivers: Used as the switching element in efficient constant current LED driver circuits.
- High-Side/Low-Side Switching: Provides necessary functionality for complex power control stages.
Equivalent Models:
- AO4614 / AO4616 (Alpha & Omega): Similar 60V dual N-channel SOP-8 MOSFETs that offer comparable RDS(ON) performance.
- Si4562DY (Vishay): A functionally similar dual N-channel device widely available as an alternative.
- FDS6990S (ON Semiconductor/Fairchild): A popular high-performance competitor in the same package and voltage class.
Package Includes:
- 1 x NCE4688 60V 6.3A Dual Channel Power MOSFET SOP-8
Additional information
| Weight | 1 g |
|---|







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