IRLML6401TRPBF P-Channel MOSFET 12V 4.3A SOT-23

The IRLML6401TRPBF is a high-performance P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) specifically designed for efficient switching and load management in compact electronics. Housed in the tiny SOT-23 surface-mount package, this transistor offers a low gate threshold voltage, which makes it perfect for direct control by low-voltage microcontrollers like Arduino and ESP32 operating at 3.3V or 5V logic. Engineers favor this MOSFET for its impressive current handling capability of up to 4.3A despite its small size, making it a powerful choice for battery management, load switching, and power inversion in portable devices. When your design requires high efficiency and space savings, the IRLML6401 provides a robust solution.

Key Features:

• Logic-Level Gate Drive: You can drive the gate directly with 3.3V or 5V logic signals from microcontrollers, eliminating the need for complex driver circuits.
• P-Channel Enhancement Mode: Operates as a high-side switch, simplifying circuit design for switching power to a load connected to the ground.
• Low On-Resistance (R_DS(on)): Minimizes power loss and heat generation, which significantly improves the overall efficiency of the circuit.
• High Current Capability: Handles a continuous drain current (I_D) of up to 4.3A in the compact SOT-23 package, ideal for medium-power loads.
• ESD Protection: Features enhanced ESD (Electrostatic Discharge) ratings for better reliability and robustness in consumer electronic applications.

Technical Specifications:

• Transistor Type: P-Channel MOSFET
• Drain-Source Voltage (V_DS): -12 V (max)
• Gate-Source Voltage (V_GS): ±8 V (max)
• Continuous Drain Current (I_D): -4.3 A (max) at V_GS = -4.5 V
• On-Resistance (R_DS(on)): 40 mΩ (max) at V_GS = -4.5 V
• Gate Threshold Voltage (V_GS(th)): -0.45 V to -1.0 V
• Power Dissipation (P_D): 1.3 W (max)
• Package: SOT-23 (Surface Mount)

Mechanical Specifications:

• Mounting: Surface Mount Technology (SMT)
• Pin Count: 3 Pins
• Soldering: Suitable for standard reflow soldering processes.

Dimensions (SOT-23):

• Body Length: ~2.9 mm
• Body Width: ~1.3 mm
• Height: ~1.0 mm

Pinout and Wiring:

• Pin 1 (Gate): The control pin. Connect this to the digital output of your microcontroller (logic HIGH turns the P-channel MOSFET OFF).
• Pin 2 (Source): Connect this to the positive power supply voltage (V+).
• Pin 3 (Drain): Connect this to one side of the load you want to switch (the other side of the load connects to ground/negative supply).
• Wiring Note: Since this is a P-Channel MOSFET, you apply a voltage close to the source (Pin 2) to turn it OFF, and you pull the gate (Pin 1) LOW (to ground) to turn the MOSFET ON. Always include a pull-up resistor (e.g., 10 kΩ) on the Gate pin to the Source pin to keep the MOSFET safely OFF by default.

Datasheet Reference:

• Download Datasheet

Commonly Used in:

• Portable Devices: Used in smartphones, tablets, and wearable devices for battery and power path management.
• DC-DC Converters: Employed in switching regulators where high-frequency, efficient switching is required.
• Consumer Electronics: High-side switching for motor control and LED backlighting in toys and home gadgets.

Applications:

• High-Side Load Switching: Efficiently switch the positive power rail for small motors, solenoids, or LED strips.
• Battery Management Systems (BMS): Control charging and discharging paths to protect and manage rechargeable batteries.
• Reverse Polarity Protection: Integrate into power inputs to guard circuits against accidental reverse battery connections.
• Power Inversion: Drive small transformers or coils in low-voltage power inverter circuits.

Equivalent Models:

• Si2301: A common P-Channel MOSFET in the SOT-23 package with similar ratings (often lower current handling).
• FDC604P: Another logic-level P-Channel option with comparable low R_DS(on) for high-efficiency switching.

Package Includes:

• 1 x IRLML6401TRPBF P-Channel MOSFET 12V 4.3A SOT-23