IRFP260N 200V 50A N-Channel Power MOSFET TO-247

IRFP260N 200V 50A N-Channel Power MOSFET (TO-247) is a rugged high-current MOSFET built for demanding switching and power conversion tasks. With its low on-resistance and high efficiency, designers often choose it for SMPS, motor control, and high-frequency inverter circuits that demand reliable operation under heavy loads.

Key Features:

• 200 V Drain-Source Rating: Handles medium to high-voltage switching with safety margin.
• High Current Capability: Carries up to 50 A continuous drain current with proper thermal design.
• Low R_DS(on): Typical values around 40 mΩ ensure minimal conduction losses.
• Fast Switching Performance: Optimized for high-speed switching with reduced gate charge.
• Robust Avalanche Energy: Withstands energy surges and stress in inductive applications.
• TO-247 Package: Supports effective heat dissipation for high-power circuits.

Technical Specifications:

• Drain-Source Voltage (V_DSS): 200 V
• Continuous Drain Current (I_D): 50 A @ 25 °C case temperature
• On-Resistance (R_DS(on)): ~0.04 Ω max at V_GS = 10 V
• Gate Threshold Voltage (V_GS(th)): 2 – 4 V typical
• Total Gate Charge (Q_g): ~170 nC
• Input Capacitance (C_iss): ~7600 pF
• Power Dissipation (P_D): Up to 300 W with adequate heatsinking
• Operating Junction Temperature: −55 °C to +150 °C
• Gate-Source Voltage (V_GS): ±20 V maximum

Mechanical Specifications:

• Package: TO-247 standard through-hole
• Mounting: Bolt or clip-mount to heatsink with insulating hardware if required
• Lead Material: Tin-plated copper leads for high current capacity
• Body Encapsulation: Epoxy resin for mechanical strength and insulation

Dimensions:

• Body Width: ~15.7 mm
• Body Height: ~20.0 mm
• Lead Pitch: ~5.45 mm between adjacent pins
• Tab Thickness: ~4.8 mm

Pinout and Wiring:

• Pin 1: Gate – receives drive signal to control conduction
• Pin 2: Drain – main current path; tab is internally connected to drain
• Pin 3: Source – completes circuit with load or ground depending on configuration
• Design Tip: Always use a gate resistor and consider a snubber or TVS diode in high-energy switching environments.

Datasheet Reference:

• Refer to the official Infineon / International Rectifier datasheet for full electrical characteristics, safe operating area, and application guidelines.

Applications:

• Switch-Mode Power Supplies (SMPS): Commonly used in high-power DC-DC converters and server power supplies.
• Motor Control: Suitable for controlling DC motors and industrial drives.
• Inverters: Works in solar inverters, UPS systems, and high-frequency converters.
• Welding Equipment: Handles large surge currents and rugged switching conditions.
• Battery Chargers: Efficiently manages current in high-capacity charging circuits.

Equivalent Models:

• IRFP264N: Higher voltage variant with similar performance
• STW20NM50: N-channel MOSFET alternative with 500 V rating
• IXFH50N20: Equivalent 200 V, 50 A MOSFET from IXYS

Package Includes:

• 1 x IRFP260N 200V 50A N-Channel Power MOSFET (TO-247)