IKW75N65EH5 IGBT 650V 90A TO247-3

IKW75N65EH5 IGBT 650V 90A TO247-3 is a high-efficiency Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. With a voltage rating of 650V and a current capacity of 90A, it is ideal for use in inverters, motor drives, and power supply circuits.

Key Features of IKW75N65EH5:

• • High Voltage and Current Rating: 650V and 90A for high-power applications.
  • Low Switching Losses: Optimized for high efficiency.
  • Fast Switching Speed: Suitable for high-frequency operations.
  • Low Saturation Voltage (V_CE(sat)): Ensures minimal power dissipation.
  • Rugged TO-247 Package: Designed for high-power applications.

Technical Specifications of IKW75N65EH5:

• • Collector-Emitter Voltage (V_CE): 650V
  • Collector Current (I_C): 90A
  • Gate Threshold Voltage (V_GE(th)): 4.5V – 6.5V
  • Saturation Voltage (V_CE(sat)): 1.7V (typical)
  • Power Dissipation: 312W
  • Switching Frequency: Optimized for high-speed applications
  • Package: TO-247-3

Schematic Diagram and Pinout of IKW75N65EH5:

• • Pinout:
    • Pin 1 (G): Gate – Controls the switching operation.
    • Pin 2 (C): Collector – Main current input.
    • Pin 3 (E): Emitter – Main current output.
  • Schematic Diagram: Features an IGBT structure with a freewheeling diode for protection.

Applications of IKW75N65EH5:

• • Motor Control: Used in industrial motor drives and inverters.
  • Power Inverters: Ideal for high-power DC-AC conversion.
  • Welding Machines: Provides high-efficiency power regulation.
  • UPS Systems: Used in uninterrupted power supply systems.

Equivalent Models of IKW75N65EH5:

• • FGH75T65SHD: Similar IGBT with comparable performance.
  • STGW75H65DFB: Alternative IGBT for high-power applications.

Datasheet:

• • Download IKW75N65EH5 Datasheet

Keywords for IKW75N65EH5:

• • IKW75N65EH5
  • 650V 90A IGBT
  • High Power Transistor
  • TO-247 IGBT
  • Motor Drive IGBT

Package Includes:

• • 1 x IKW75N65EH5 IGBT 650V 90A (TO-247 Package)