DMN10H170SK3-13 N-Channel MOSFET 100V 12A TO-252

DMN10H170SK3-13 N-Channel MOSFET 100V 12A TO-252 is a high-performance, next-generation N-Channel Enhancement Mode MOSFET engineered for applications demanding high efficiency and reliability in power switching. This device utilizes advanced trench technology, achieving an extremely low Drain-Source On-Resistance (R_DS(ON)) which significantly minimizes power loss and heat generation during operation. Consequently, designers can achieve superior power density and thermal management in their systems. With a low gate charge (Q_G) and high pulse current capability, the DMN10H170SK3-13 provides fast switching performance necessary for high-frequency circuits. Furthermore, its robust 100V breakdown voltage makes it an excellent choice for switching and power management functions in demanding industrial and automotive environments.

Key Features:

• Low On-Resistance (R_DS(ON)): Achieves very low R_DS(ON), typically 17 mΩ at V_GS=10V, which drastically reduces conduction losses and improves system efficiency.
• Low Gate Charge (Q_G): The low Q_G minimizes the charge required to switch the transistor, enabling faster switching speeds and lower switching losses in high-frequency topologies.
• High Power Density: The Diodes Incorporated advanced trench process technology allows the MOSFET to handle high current within a compact package footprint.
• 100V Drain-Source Voltage: Provides robust voltage handling capability suitable for 48V systems and intermediate bus conversions.
• Qualified for Automotive Applications: Meets high reliability standards for use in demanding automotive and industrial environments.

Technical Specifications:

• Drain-Source Voltage (V_DSS): 100 V
• Continuous Drain Current (I_D): 12 A (at T_C = +25°C)
• Pulsed Drain Current (I_DM): 48 A (Maximum)
• Gate-Source Voltage (V_GS): ±20 V
• R_DS(ON) Max: 20 mΩ (at V_GS = 10 V, I_D = 8 A)
• Total Gate Charge (Q_G): Typically 6.0 nC
• Operating Temperature Range (T_J): −55°C to +150°C

Mechanical Specifications:

• Package Type: TO-252 (DPAK, D-PAK)
• Mounting: Surface Mount Device (SMD/SMT)
• Lead Finish: Lead-free, fully compliant with RoHS directives.
• Flammability Rating: UL 94 V-0

Dimensions:

• Body Length: ≈ 6.5 mm (excluding mounting tab)
• Body Width: ≈ 6.2 mm
• Total Height (mounted): ≈ 2.3 mm
• Pin Pitch: ≈ 2.3 mm
• Weight: ≈ 0.35 g (Low mass supports high vibration resistance)

Pinout and Wiring:

• Pin 1 (Gate – G): This is the control terminal; apply voltage here to switch the MOSFET on.
• Pin 2 (Drain – D): This pin and the large metal tab are electrically connected and serve as the output terminal for the load connection.
• Pin 3 (Source – S): Connect this pin to the reference ground (GND) or the return path of the current.
• Wiring Note: Always use short, wide tracks for the Drain and Source connections to minimize parasitic inductance and thermal resistance, maximizing performance.

Datasheet Reference:

• Download DMN10H170SK3-13 N-Channel MOSFET Datasheet

Commonly Used in:

• DC-DC Converters: Essential components in synchronous rectification and primary switching stages in buck and boost converters.
• Motor Control: Used in H-bridge and half-bridge circuits for driving DC motors and controlling solenoids in industrial equipment.
• Battery Management Systems (BMS): Suitable for cell protection and high-side/low-side battery switching applications.
• Power Supplies: Integrated into high-efficiency power adapters and uninterruptible power supplies (UPS).

Applications:

• Load Switching: Efficiently managing power delivery to various loads in automotive and consumer electronics.
• High-Frequency PWM Control: Providing the fast switching capability required for precise Pulse Width Modulation control.
• Power Over Ethernet (PoE): Used in the power conversion stages of PoE devices.
• Automotive Systems: Driving injectors, ignition systems, and various body control modules where reliability is critical.

Equivalent Models:

• IRF3708 (Vishay): A popular alternative with similar voltage and current ratings, though often requiring higher gate drive.
• FDD8447L (ON Semi): Offers comparable R_DS(ON) and Q_G characteristics in a similar surface-mount package.
• AOD4189 (Alpha & Omega): Another highly efficient N-Channel MOSFET with similar specifications for direct substitution.

Package Includes:

• 1 x DMN10H170SK3-13 N-Channel MOSFET (100V, 12A, TO-252/DPAK)