BSS138LT1 N CHANNEL POWER MOSFET 200mA 50V SOT−23

The BSS138LT1 is a compact N-Channel Power MOSFET designed for switching and amplification in low-power applications. With a maximum drain current of 200mA and a drain-to-source voltage of 50V, it is ideal for small-signal applications, logic level shifting, and low-voltage circuits. The SOT-23 package ensures minimal space usage on PCBs.

Key Features of BSS138LT1 N-Channel Power MOSFET:

• • Low On-Resistance: Provides efficient current handling with minimal power loss.
  • Compact SOT-23 Package: Suitable for space-constrained designs.
  • Logic-Level Drive: Compatible with standard 3.3V and 5V logic signals.
  • Fast Switching: Ideal for high-speed switching applications.
  • High Voltage Handling: Can handle up to 50V drain-to-source voltage.

Technical Specifications of BSS138LT1 N-Channel Power MOSFET:

• • Maximum Drain-to-Source Voltage (V_DS): 50V
  • Maximum Drain Current (I_D): 200mA
  • Gate Threshold Voltage (V_GS(th)): 1.3V to 2.5V
  • Maximum Power Dissipation (P_D): 225mW
  • On-Resistance (R_DS(on)): 3.5Ω (at V_GS = 4.5V)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: SOT-23 (3-pin)

Pinout of BSS138LT1 N-Channel Power MOSFET:

• • Pin 1 (G): Gate – Controls the MOSFET operation.
  • Pin 2 (S): Source – Connected to the ground or lower voltage side.
  • Pin 3 (D): Drain – Connected to the load or higher voltage side.

Applications of BSS138LT1 N-Channel Power MOSFET:

• • Logic Level Shifting: Converts voltage levels in digital circuits.
  • Signal Switching: Controls low-power devices in electronic circuits.
  • Low-Voltage Circuits: Suitable for applications with low voltage and current requirements.
  • Battery-Operated Devices: Efficient for portable applications.
  • LED Drivers: Drives low-power LEDs with precise control.

Advantages of BSS138LT1 N-Channel Power MOSFET:

• • Small and compact SOT-23 package for space-constrained designs.
  • Logic-level compatibility for easy interfacing with microcontrollers.
  • Low on-resistance for efficient power usage.
  • Reliable performance in low-power applications.

Precautions for Safe Usage:

• • Avoid exceeding the maximum voltage and current ratings.
  • Ensure proper heat dissipation to prevent thermal damage.
  • Use appropriate gate resistance to avoid high inrush currents.
  • Handle carefully to prevent electrostatic discharge (ESD) damage.

Datasheet and Documentation:

• • Download Datasheet

Keywords for BSS138LT1 N-Channel Power MOSFET:

• • BSS138LT1
  • N-Channel MOSFET
  • Logic-Level MOSFET
  • 50V MOSFET
  • Small Signal MOSFET
  • SOT-23 MOSFET

Package Includes:

• • 1 x BSS138LT1 N-Channel Power MOSFET (SOT-23)