AOD452A N-Channel Power Mosfet 25V 55A TO-252

AOD452A N-Channel Power Mosfet 25V 55A TO-252 is a high-performance N-Channel Enhancement Mode Power MOSFET designed specifically for high-efficiency, high-current switching applications. This advanced trench technology device offers an extremely low on-resistance (R_DS(ON)), which consequently minimizes power loss and improves overall system efficiency in demanding electrical circuits. Featuring a low gate charge, the AOD452A achieves fast switching speeds, making it an ideal choice for pulsed power applications and high-frequency DC/DC converters. Furthermore, its robust 55A current rating and 25V breakdown voltage make it perfectly suited for battery management and load switching in portable electronics and power tools. Designers select this MOSFET for its excellent performance-to-size ratio in the industry-standard TO-252 (DPAK) surface mount package.

Key Features:

• Ultra-Low R_DS(ON): Achieves a typical on-resistance of just 5.8 mΩ at V_GS=10V, significantly reducing conduction losses and heat generation.
• High Current Capability: Handles a continuous drain current (I_D) of 55 A, providing robust power handling for high-load applications.
• Fast Switching Speed: Features low gate charge (Q_G), therefore enabling rapid turn-on and turn-off times essential for high-frequency circuits.
• Advanced Trench Technology: Utilizes AOS’s proprietary process to provide excellent V_GS(th) control and superior ruggedness.
• Surface Mount Package: Supplied in the widely accepted TO-252 (DPAK) package, which allows for efficient heat dissipation when mounted on a PCB.

Technical Specifications:

• V_DS Drain-Source Voltage: 25 V
• I_D Continuous Drain Current (V_GS=10V): 55 A (≈ 40 A @ T_C=100°C)
• R_DS(ON) Max On-Resistance: ≤ 6.6 mΩ (at V_GS=10V)
• V_GS Gate-Source Voltage (Max): ±20 V
• Q_G Total Gate Charge: Typically 16 nC
• P_D Power Dissipation (Max): 50 W (at T_C=25°C)
• T_J Max Operating Junction Temperature: 150°C

Mechanical Specifications:

• Package Style: TO-252 (DPAK), Surface Mount
• Pin Count: 3+Tab (Gate, Drain, Source)
• Thermal Resistance (R_θJC): 2.5°C/W (Junction-to-Case)
• Lead Finish: Lead (Pb)-free and Halogen-free
• Moisture Sensitivity Level (MSL): MSL 1 (Unlimited floor life at ≤ 30°C/85% RH)

Dimensions:

• Body Length (D): ≈ 6.5 mm
• Body Width (E): ≈ 6.2 mm
• Overall Height (A): ≈ 2.3 mm (Excluding leads)
• Lead Pitch (e): 2.286 mm (0.09 inch)
• Drain Tab: The large metal area (Tab) acts as the Drain connection and thermal pathway.

Pinout and Wiring:

• Pin 1 (Gate – G): This is the control terminal. Connect it to the microcontroller or driver circuit to manage the switching state.
• Pin 2 (Drain – D): Connect this terminal to the positive supply side of the load or the high-voltage side of the switching path. The metal tab is also the Drain.
• Pin 3 (Source – S): Connect this terminal to the ground (GND) or the return path of the circuit.
• Wiring Note: Always connect a gate resistor (R_G) in series with the Gate pin to damp oscillations and protect the driving IC. Hence, careful layout minimizes lead inductance, maximizing switching efficiency.

Datasheet Reference:

• Download Alpha & Omega Semiconductor AOD452A Datasheet

Commonly Used in:

• Portable Devices: Used widely in battery packs, power tools, and mobile devices for battery protection and load switching.
• Power Supplies: Essential component in synchronous rectifier circuits for high-efficiency DC-DC buck converters.
• Motor Control: Driving low-voltage DC motors and solenoids in H-bridge or half-bridge configurations.

Applications:

• Battery Management Systems (BMS): Employed as a high-side or low-side protection switch to disconnect the battery under fault conditions.
• Load Switching: Efficiently controls the power supply to specific blocks of a system, such as in solid-state relays (SSRs) or power distribution networks.
• High-Frequency Inverters: Performs the high-speed switching required in low-voltage power inverters and converters. Moreover, its thermal performance makes it suitable for continuous cycling.

Equivalent Models:

• IRLZ44N (International Rectifier/Infineon): A popular N-Channel MOSFET with similar voltage rating, often used in direct switching applications.
• FDD8424H (ON Semiconductor): A comparable low R_DS(ON) device that designers often consider a functional alternative.
• NDS8435A (Fairchild/ON Semi): Another N-Channel logic-level device suitable for high-current, low-voltage switching tasks.

Package Includes:

• 1 x AOD452A N-Channel Power Mosfet 25V 55A TO-252 (DPAK)